SUM110P04-04L
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
240
200
200
160
120
80
V GS = 10 V thru 5 V
4V
175
150
125
100
75
50
T C = 125 °C
40
3V
25
25 °C
- 55 °C
0
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
240
V DS - Drain-to-Source Voltage (V)
Output Characteristics
T C = - 55 °C
0.010
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
200
160
25 °C
125 °C
0.008
0.006
V GS = 4.5 V
120
80
0.004
V GS = 10 V
40
0
0.002
0.000
0
15
30
45
60
75
90
0
20
40
60
80
100
120
14 000
I D - Drain Current (A)
Transconductance
20
I D - Drain Current (A)
On-Resistance vs. Drain Current
12 000
C iss
16
V DS = 20 V
I D = 110 A
10 000
8000
6000
4000
C oss
12
8
2000
0
C rss
4
0
0
5
10
15
20
25
30
35
40
0
50
100
150
200
250
300
350
400
450
V DS - Drain-to-Source Voltage (V)
Capacitance
Q g - Total Gate Charge (nC)
Gate Charge
S13-2478-Rev. D, 09-Dec-13
3
Document Number: 72437
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